Near Room-Temperature Growth of $\bf SiO_{2}$ Films for p-HgCdTe Passivation by Liquid Phase Deposition-Reference-Cited by-同舟云学术

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Near Room-Temperature Growth of $\bf SiO_{2}$ Films for p-HgCdTe Passivation by Liquid Phase Deposition

Published:1997-06-01 Issue:Part 2, No. 6A Volume:36 Page:L696-L698
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Houng Mau-Phon,Wang Yeong-Her,Wang Na-Fu,Huang Chien-Jung,Chang Wai-Jyh

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of passivation layers by liquid phase deposition (LPD) on moisture and oxygen protection for flexible organic light-emitting diode (FOLED);Microelectronic Engineering;2015-12

2. Effect of post-annealing treatment on silicon dioxide films for passivating flexible organic light-emitting diode;Solid-State Electronics;2013-01

3. AlGaN/GaN MOSHFET with a SiO2 Gate by Liquid Phase Deposition;Physica Scripta;2004-01-01

4. Optimization of pretreatment for liquid-phase deposition of SiO2 on ARTON plastic substrate;Journal of Electronic Materials;2003-06

5. Liquid phase deposited SiO2 on GaN;Materials Chemistry and Physics;2003-04

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