Initial Stage of Stress-Induced Migration Phenomenon in Aluminum Interconnection on Semiconductor Device-Reference-Cited by-同舟云学术

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Initial Stage of Stress-Induced Migration Phenomenon in Aluminum Interconnection on Semiconductor Device

Published:1997-05-15 Issue:Part 1, No. 5A Volume:36 Page:2601-2605
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Aoyagi Minoru,Asada Kunihiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Change in electrical resistance caused by stress-induced migration;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

2. Quenching of Vacancies in Aluminum Interconnections on Semiconductor Devices;Japanese Journal of Applied Physics;1998-01-15

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