Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides
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Published:1997-07-15
Issue:Part 1, No. 7A
Volume:36
Page:4225-4229
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Ahn Jinho,Kwong Dim-Lee
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering