Performance and Reliability Trade-off of Large-Tilted-Angle Implant P-Pocket on Stacked-Gate Memory Devices-Reference-Cited by-同舟云学术

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Performance and Reliability Trade-off of Large-Tilted-Angle Implant P-Pocket on Stacked-Gate Memory Devices

Published:1997-07-15 Issue:Part 1, No. 7A Volume:36 Page:4289-4294
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shen Shih-Jye,Chen Hsin-Ming,Lin Chrong-Jung,Chen Hwi-Huang,Hong Gary,Hsu Charles Ching-Hsiang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimal Channel Doping Profile of Two-Dimensional Metal-Oxide-Semiconductor Field-Effect Transistors via Geometric Programming;Journal of Advanced Simulation in Science and Engineering;2015

2. Optimization of Program Threshold Window from Understanding of Novel Fast Charge Loss in Nonvolatile Memory;Japanese Journal of Applied Physics;1998-08-15

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