Light-Induced Annealing of Dangling Bonds in a-Si:H-Reference-Cited by-同舟云学术

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Light-Induced Annealing of Dangling Bonds in a-Si:H

Published:1997-03-15 Issue:Part 1, No. 3A Volume:36 Page:991-996
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takeda Kosei,Hikita Harumi,Kimura Yutaka,Yokomichi Haruo,Yamaguchi Masaaki,Morigaki Kazuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current-induced and light-induced macroscopic changes in thin film solar cells: Device degradation mechanism;Solar Energy;2017-02

2. Light-induced changes in silicon nanocrystal based solar cells: Modification of silicon–hydrogen bonding on silicon nanocrystal surface under illumination;Japanese Journal of Applied Physics;2016-06-20

3. Hydrogenated Microcrystalline Silicon;Light-Induced Defects in Semiconductors;2014-09-13

4. Photovoltaic Properties of a-Si:H Films Grown by Plasma Enhanced Chemical Vapor Deposition: A Review;Materials Express;2012-09-01

5. Modeling of light-induced defect creation in hydrogenated amorphous silicon;Physical Review B;2007-08-02

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