Spectroscopic Ellipsometry of SIMOX (Separation by Implanted Oxygen): Thickness Distribution of Buried Oxide and Optical Properties of Top-Si Layer

Author:

Jayatissa Ahalapitiya Hewage,Yamaguchi Tomuo,Nasu Masahiro,Aoyama Mitsuru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of temperature on capacitance–voltage characteristics of SOI;Materials Science and Engineering: B;2005-12

2. New Application of Carbon Nanotubes. Surface and Thin Film Analysis by Spectroscopic Ellipsometry.;Hyomen Kagaku;2000

3. Spectroellipsometric characterization of SIMOX with nanometre-thick top Si layers;Thin Solid Films;1998-02

4. Radiative properties of SIMOX;IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A;1998

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