Metal-Oxide-Si Capacitors Hot-Electron and Radiation Hardness Improvement by Gate Electrodes Deposited Using Amorphous Si and Gate Oxides Rapid Thermal Annealed in $\bf N

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Metal-Oxide-Si Capacitors Hot-Electron and Radiation Hardness Improvement by Gate Electrodes Deposited Using Amorphous Si and Gate Oxides Rapid Thermal Annealed in $\bf N_{2}O$

Published:1997-05-30 Issue:Part 2, No. 5B Volume:36 Page:L604-L606
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chang-Liao Kuei-Shu,Chen Ling-Chih

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfaces;Materials Science and Technology;2013-02-15

2. Low-temperature Ar/N[sub 2] remote plasma nitridation of SiO[sub 2] thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002

3. Electric property improvement and boron penetration suppression in metal–oxide–Si capacitors by amorphous-Si gate electrode and two-step nitridation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001

4. Improvement of oxynitride reliability by two-step N2O nitridation;Solid-State Electronics;1999-11

5. Improved Blocking Voltage in Diode with Neutron-Transmutation-Doped Silicon by Field Oxide Annealed in N2O;Japanese Journal of Applied Physics;1998-06-15

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