Drift-Induced Step Instabilities on Si(111) Vicinal Face near 1×1↔7×7 Transition Temperature-Reference-Cited by-同舟云学术

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Drift-Induced Step Instabilities on Si(111) Vicinal Face near 1×1↔7×7 Transition Temperature

Published:2007-06-15 Issue:6 Volume:76 Page:064602
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Ikawa Kenta¹,Sato Masahide²,Uwaha Makio³

Affiliation:

1. Division of Mathematical and Physical Sciences, Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa 920-1192

2. Information Media Center of Kanazawa University, Kanazawa 920-1192

3. Department of Physics, Nagoya University, Nagoya 464-8602

Publisher

Japan Society of Applied Physics

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.1143/JPSJ.76.064602

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Attachment–detachment limited kinetics on ultra-flat Si(111) surface under etching with molecular oxygen at elevated temperatures;Surface Science;2015-03

2. Effect of impingement and evaporation on drift-induced step instabilities on Si(111) vicinal face near transition temperature;Journal of Crystal Growth;2008-04

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