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A New Spin-Functional Metal–Oxide–Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET

  • Published:2010-01-08 Issue:1 Volume:3 Page:013003
  • ISSN:1882-0778
  • Container-title:Applied Physics Express
  • language:en
  • Short-container-title:Appl. Phys. Express

Author:

Shuto Yusuke,Nakane Ryosho,Wang Wenhong,Sukegawa Hiroaki,Yamamoto Shuu'ichirou,Tanaka Masaaki,Inomata Koichiro,Sugahara Satoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of ferrite-based magnetic tunnel junction for spintronic applications;Applications of Nanostructured Ferrites;2023

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3. Self-Nanostructuring in SrTiO3: A Novel Strategy for Enhancement of Thermoelectric Response in Oxides;ACS Applied Materials & Interfaces;2019-08-16

4. Fabrication of Magnetic Tunnel Junctions;Advanced Applications in Manufacturing Enginering;2019

5. Chemical effects at interfaces of Fe/MgO/Fe magnetic tunnel junction;Superlattices and Microstructures;2016-12
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