Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method-Reference-Cited by-同舟云学术

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Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method

Published:2010-07-02 Issue:7 Volume:3 Page:075501
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Imade Mamoru,Hirabayashi Yasuhiro,Konishi Yusuke,Ukegawa Hiroshi,Miyoshi Naoya,Yoshimura Masashi,Sasaki Takatomo,Kitaoka Yasuo,Mori Yusuke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=7/a=075501/pdf

Reference15 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

3. Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers

4. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

5. Bulk GaN crystals grown by HVPE

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1. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

2. Suppression of polycrystal nucleation by methane addition at moderate timing to maintain GaN crystal growth on point seeds in the Na-flux method;Journal of Crystal Growth;2024-02

3. Research Progress in Liquid Phase Growth of GaN Crystals;Chemistry – A European Journal;2024-01-12

4. Seed-mediated growth of ZrC whisker and its toughening effect on ZrB2-SiC-C ceramic;Journal of the European Ceramic Society;2023-09

5. Monitoring of GaN crystal growth rate in the Na flux growth via electroresistometry of Ga-Na solution;Journal of Crystal Growth;2023-09

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