Passive and Hybrid Mode-Locking of an External-Cavity GaInN Laser Diode Incorporating a Strong Saturable Absorber
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=3/a=032104/pdf
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1. Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications;Journal of Physics D: Applied Physics;2021-01-22
2. Intensity Correlation Analysis on Blue-Violet FemtosecondPulses from a Dispersion-Compensated GaInN Mode-LockedSemiconductor Laser Diode;Applied Sciences;2015-09-10
3. Implementation and investigation of mode locking in GaN-based laser diodes in external cavity configuration;physica status solidi (a);2014-12-30
4. Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes;SPIE Proceedings;2014-02-27
5. Gain-switching dynamics in optically pumped single-mode InGaN vertical-cavity surface-emitting lasers;Optics Express;2014-02-18
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