Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/18/i=11/a=2169/pdf
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of Zn-Doped Ga0.86In0.14As0.13Sb0.87;Brazilian Journal of Physics;2014-10-01
2. Liquid phase epitaxy growth and characterization of Ga1−xInxAsySb1−y quaternary alloys;Materials Science and Engineering: B;2002-04
3. InGaAsSb photovoltaic cells with enhanced open-circuit voltage;IEE Proceedings - Optoelectronics;2000-06-01
4. Growth and Characterization of High-Quality InAs0.86Sb0.05P0.09Alloy by Liquid-Phase Epitaxy;Japanese Journal of Applied Physics;1999-03-15
5. Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb;Thin Solid Films;1998-02
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