Temporal Donor Generation in Undoped Hydrogenated Amorphous Silicon Induced by Swift Proton Bombardment
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=6/a=061401/pdf
Reference10 articles.
1. New materials for radiation hard semiconductor dectectors
2. Overview and status of ATLAS Pixel Detector
3. Activity and current status of R&D on space solar cells in Japan
4. Radiation hardness of amorphous silicon particle sensors
5. Radiation-resistant photoconductivity of doped silicon under 17 MeV proton bombardment
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