Stability Enhancement of Polysilicon Thin-Film Transistors Using Stacked Plasma-Enhanced Chemical Vapor Deposited SiO2/SiNxGate Dielectric-Reference-Cited by-同舟云学术

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Stability Enhancement of Polysilicon Thin-Film Transistors Using Stacked Plasma-Enhanced Chemical Vapor Deposited SiO2/SiNxGate Dielectric

Published:2005-09-08 Issue:9A Volume:44 Page:6417-6420
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Choi Byoung-Deog,Kim Won-Sik,So Myeong-Seob,Koo Jae-Bon,Kakkad Ramesh,Mo Yeon-Gon,Kim Sung-Chul

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Role of SiOxNy surface passivation layer on stability improvement and kink effect reduction of ELA poly silicon thin film transistors;Microelectronic Engineering;2016-10

5. Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-Film Transistors Due to Mobile Sodium;IEEE Journal of the Electron Devices Society;2016-09

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