Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation-Reference-Cited by-同舟云学术

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Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation

Published:2005-10-11 Issue:10 Volume:44 Page:7395-7399
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kawase Kazumasa,Umeda Hiroshi,Inoue Masao,Tsujikawa Shimpei,Akamatsu Yasuhiko,Suwa Tomoyuki,Higuchi Masaaki,Komura Masanori,Teramoto Akinobu,Ohmi Tadahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of NbN Tunnel Junctions With Radical-Nitrided $\hbox{AlN}_{\rm x}$ Barriers;IEEE Transactions on Applied Superconductivity;2013-06

2. Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate;Microelectronics Reliability;2007-04

3. X-ray Photoelectron Spectroscopic Study of Nitrogen Depth Profile in Radical Nitrided Silicon Oxynitride Film;Shinku;2007

4. Control of Nitrogen Depth Profile near Silicon Oxynitride/Si(100) Interface Formed by Radical Nitridation;Japanese Journal of Applied Physics;2006-08-04

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