Ge2Sb2Te5Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory-Reference-Cited by-同舟云学术

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Ge2Sb2Te5Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory

Published:2005-04-21 Issue:4B Volume:44 Page:2691-2695
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yeung Fai,Ahn Su-Jin,Hwang Young-Nam,Jeong Chang-Wook,Song Yoon-Jong,Lee Su-Youn,Lee Se-Ho,Ryoo Kyung-Chang,Park Jae-Hyun,Shin Jae-Min,Jeong Won-Cheol,Kim Young-Tae,Koh Gwan-Hyeob,Jeong Gi-Tae,Jeong Hong-Sik,Kim Kinam

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of Advances in Deposition Methods and Material Properties of Superlattice Phase-Change Memory;ACS Applied Electronic Materials;2023-10-25

2. Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*;Chinese Physics B;2021-05-01

3. Phase and grain size engineering in Ge-Sb-Te-O by alloying with La-Sr-Mn-O towards improved material properties;Materials & Design;2021-02

4. Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition;Journal of Materials Science: Materials in Electronics;2019-11-23

5. Write-Aware Data Allocation on Heterogeneous Memory Architecture with Minimum Cost;2018 IEEE 24th International Conference on Embedded and Real-Time Computing Systems and Applications (RTCSA);2018-08

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