High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates-Reference-Cited by-同舟云学术

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High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

Published:2005-04-08 Issue:No. 17 Volume:44 Page:L508-L510
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Abe Tomoki,Ando Koshi,Ikumi Katsushi,Maeta Hiroyasu,Naruse Junji,Miki Kouhei,Ehara Akihiro,Kasada Hirofumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic Materials Accelerating the Development of Ubiquitous Devices;Journal of the Society of Materials Science, Japan;2023-08-15

2. ZnSe-Based Photodetectors;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

3. High-Gain Ultraviolet Avalanche Photodiodes Using a ZnSe-Based Organic–Inorganic Hybrid Structure;Journal of Electronic Materials;2020-02-04

4. Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic–Inorganic Hybrid Structure;Journal of Electronic Materials;2018-05-17

5. Development of ZnSe-based organic-inorganic hybrid UV-APDs array;physica status solidi (c);2016-03-03

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