Impact of Tunnel Etching Process on Electrical Performances of SON Devices-Reference-Cited by-同舟云学术

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Impact of Tunnel Etching Process on Electrical Performances of SON Devices

Published:2005-07-26 Issue:7B Volume:44 Page:5795-5798
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Caubet V.,Borel S.,Arvet C.,Bilde J.,Chanemougame D.,Monfray S.,Ranica R.,Mazoyer P.,Skotnicki T.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HCl Selective Etching of Si1-xGex versus Si for Silicon On Nothing and Multi Gate Devices;ECS Transactions;2019-12-18

2. Quantitative analysis of Si/SiGeC superlattices using atom probe tomography;Ultramicroscopy;2015-12

3. Quantitative investigation of SiGeC layers using atom probe tomography;Ultramicroscopy;2015-03

4. HCl Selective Etching of SiGe versus Si in Stacks Grown on (110);ECS Transactions;2010-10-01

5. (Invited) Si, SiGe, Ge, and III-V Semiconductor Nanomembranes and Nanowires Enabled by SiGe Epitaxy;ECS Transactions;2010-10-01

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