Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces-Reference-Cited by-同舟云学术

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Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces

Published:2005-01-11 Issue:1A Volume:44 Page:12-16
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Miyamura Satoshi,Seto Hiroki,Inokuma Takao,Iiyama Koichi,Takamiya Saburo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Thickness dependent magnetic and ferroelectric properties of LaNiO3 buffered BiFeO3 thin films;Current Applied Physics;2015-03

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