Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes

Published:2005-05-10 Issue:5A Volume:44 Page:3028-3031
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huang Shao-Hua,Horng Ray-Hua,Hsu Shun-Cheng,Chen Tsung-Yu,Wuu Dong-Sing

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and Electrical Characteristics of Vertical Light-Emitting Diodes Formed Using Various Current Blocking Methods;Science of Advanced Materials;2018-02-01

2. Light Extraction of High-Efficient Light-Emitting Diodes;Topics in Applied Physics;2017

3. Thin-GaN LED Materials;Handbook of Advanced Lighting Technology;2017

4. Thin-GaN LED Materials;Handbook of Advanced Lighting Technology;2015

5. Light Extraction Efficiency Part B. Light Extraction of High Efficient LEDs;Topics in Applied Physics;2013

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