Arsenic Doping ofn-Type β-FeSi2Films by Sputtering Method-Reference-Cited by-同舟云学术

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Arsenic Doping ofn-Type β-FeSi2Films by Sputtering Method

Published:2005-02-04 Issue:No. 8 Volume:44 Page:L261-L264
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Zhengxin,Osamura Masato,Ootsuka Teruhisa,Kuroda Ryo,Fukuzawa Yasuhiro,Mise Takahiro,Otogawa Naotaka,Nakayama Yasuhiko,Tanoue Hisao,Makita Yunosuke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of band offset and doping concentration on the photovoltaic properties of n-β-FeSi2 /p-Si and p-β-FeSi2 /n-Si heterojunction solar cells;Surface and Interface Analysis;2014-02-05

2. Itinerant magnetism in doped semiconducting β-FeSi2 and CrSi2;Scientific Reports;2013-12

3. Fabrication of a ZnO:Al/Amorphous-FeSi 2 Heterojunction at Room Temperature;Chinese Physics Letters;2011-10

4. Effect of Si/Fe ratio on the boron and phosphorus doping efficiency of β-FeSi2 by magnetron sputtering;Thin Solid Films;2011-10

5. Photovoltaic characteristics of a-Si/β-FeSi2/c-Si double heterojunction fabricated by magnetron sputtering;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2011-09

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