Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Crystalline Fraction and Doping Concentration Effect on Heterojunction Solar Cells n-Doped μc-Si:H Back Surface Field Layer;Journal of Nanoscience and Nanotechnology;2015-03-01
2. Influence of n-Doped μc-Si:H Back Surface Field Layer with Micro Growth in Crystalline-Amorphous Silicon Heterojunction Solar Cells;Journal of Nanoscience and Nanotechnology;2014-12-01
3. Light-induced hydrogen evolution from hydrogenated amorphous silicon: Hydrogen diffusion by formation of bond centered hydrogen;Journal of Applied Physics;2014-02-21
4. Evaluation of the junction interface of the crystalline germanium heterojunction solar cells;Japanese Journal of Applied Physics;2014-01-01
5. Low-Temperature Back-Surface-Field Structures Applied to Crystalline Silicon Solar Cells: Two-Step Growth with Hydrogen Plasma Treatment for Improving the Reproducibility;Japanese Journal of Applied Physics;2012-10-22
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