Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of fluoride layer thickness on the leakage current in Au/CaF2/Si(111) heterostructures;Thin Solid Films;2023-10
2. Calcium Fluoride Films with 2–10 nm Thickness on Silicon-(111): Growth, Diagnostics, Study of the through Current Transport;Semiconductors;2023-04
3. Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics;2020 Device Research Conference (DRC);2020-06
4. Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer;Semiconductors;2019-06
5. Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System);Technical Physics Letters;2018-12
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