GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes-Reference-Cited by-同舟云学术

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GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes

Published:2004-06-09 Issue:6A Volume:43 Page:3401-3409
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yagi Hideki,Sano Takuya,Ohira Kazuya,Plumwongrot Dhanorm,Maruyama Takeo,Haque Anisul,Tamura Shigeo,Arai Shigehisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Structures of Advanced Materials;Optical Properties of Advanced Materials;2013

2. Highly Uniform Fabrication of Diffraction Gratings for Distributed Feedback Laser Diodes by Nanoimprint Lithography;Japanese Journal of Applied Physics;2011-06-20

3. Highly Uniform Fabrication of Diffraction Gratings for Distributed Feedback Laser Diodes by Nanoimprint Lithography;Japanese Journal of Applied Physics;2011-06-01

4. GaInAsP/InP Quantum Wire Lasers;IEEE Journal of Selected Topics in Quantum Electronics;2009

5. GaInAsP/InP Distributed Reflector Lasers and Integration of Front Power Monitor by Using Lateral Quantum Confinement Effect;Japanese Journal of Applied Physics;2008-06-13

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