Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique-Reference-Cited by-同舟云学术

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Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique

Published:2004-03-05 Issue:No. 3B Volume:43 Page:L411-L413
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujii Tetsuo,David Aurelien,Schwach Carole,Pattison Paul Morgan,Sharma Rajat,Fujito Kenji,Margalith Tal,Denbaars Steven P.,Weisbuch Claude,Nakamura Shuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=3B/a=L411/pdf

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes;Journal of Applied Physics;2022-08-14

2. Blue semipolar InGaN microcavity light-emitting diode with varying cavity lengths from 113 to 290 nm;Applied Physics Express;2021-03-16

3. Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length;Optics Express;2020-09-23

4. Flexible inorganic oxide thin-film electronics enabled by advanced strategies;Journal of Semiconductors;2020-04-01

5. Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation;Nanoscale;2019

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