Growth and Characterization of (Ba0.5Sr0.5)TiO3Films Epitaxially Grown on (002) GaN/(0006) Al2O3Electrode-Reference-Cited by-同舟云学术

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Growth and Characterization of (Ba0.5Sr0.5)TiO3Films Epitaxially Grown on (002) GaN/(0006) Al2O3Electrode

Published:2004-10-15 Issue:No. 11A Volume:43 Page:L1425-L1428
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Cho Chae-Ryong,Hwang Jae-Yeol,Kim Jong-Pil,Jeong Se-Young,Yoon Soon-Gil,Lee Won-Jae

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=11A/a=L1425/pdf

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Domain Matched Epitaxial Growth of Dielectric Thin Films;Materials Horizons: From Nature to Nanomaterials;2020

2. Growth of NbO2 thin films on GaN(0001) by molecular beam epitaxy;Thin Solid Films;2019-12

3. Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices;Advanced Functional Materials;2019-07-22

4. Epitaxial growth of (111) BaTiO3 thin films on (0002) GaN substrates with SrTiO3/TiN buffer layers;Journal of Materials Science: Materials in Electronics;2019-04-12

5. Domain matched epitaxial growth of (111) Ba0.5Sr0.5TiO3thin films on (0001) Al2O3with ZnO buffer layer;Journal of Applied Physics;2015-03-28

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