High-Power 200 mW 660 nm AlGaInP Laser Diodes with Low Operating Current-Reference-Cited by-同舟云学术

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High-Power 200 mW 660 nm AlGaInP Laser Diodes with Low Operating Current

Published:2004-04-27 Issue:4B Volume:43 Page:1951-1955
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hiroyama Ryoji,Inoue Daijiro,Kameyama Shingo,Tajiri Atsushi,Shono Masayuki,Sawada Minoru,Ibaraki Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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