Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions-Reference-Cited by-同舟云学术

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Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions

Published:2004-04-27 Issue:4B Volume:43 Page:2180-2184
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Park Tai-su,Cho Hye Jin,Choe Jeong Dong,Park Donggun,Yoon Euijoon,Lee Jong-Ho

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A New Figure of Merit, ${\Delta V_{\text {DIBLSS}} /(I_{\rm {d},{\mathrm{ sat}}} /I_{\rm {sd},{\mathrm{ leak}}} )}$ , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device;IEEE Journal of the Electron Devices Society;2017-01

2. Reduction of ambipolar characteristics of vertical channel tunneling field-effect transistor by using dielectric sidewall;Semiconductor Science and Technology;2013-09-18

3. Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs);IEEE Transactions on Electron Devices;2006-03

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