Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors-Reference-Cited by-同舟云学术

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Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

Published:2004-01-13 Issue:1 Volume:43 Page:111-112
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hwu Ming-Jyh,Chiu Hsien-Chin,Yang Shih-Cheng,Chan Yi-Jen,Chang Liann-Be

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=1R/a=111/pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stack Layer SiO[sub 2]/Gd[sub 2]O[sub 3]/SiO[sub 2]/GaAs pH-Sensitive Electrolyte Insulator Semiconductor Capacitors and Their Anneal Temperature Dependency;Journal of The Electrochemical Society;2010

2. Comprehensive Study of GaAs MOSFETs Using Gadolinium Oxide and Praseodymium Oxide Layers;Journal of The Electrochemical Society;2008

3. Comprehensive Characterization of AlGaAs∕InGaAs∕GaAs Composite-Channel High-Electron Mobility Transistor;Journal of The Electrochemical Society;2007

4. Determination of the d31 piezoelectric coefficient of PbZrxTi1−xO3 thin films using multilayer buckled micromembranes;Journal of Applied Physics;2006-09

5. Mechanical effect of gold nanoparticles labeling used for biochemical sensor applications: A multimode analysis by means of SiNx micromechanical cantilever and bridge mass detectors;Review of Scientific Instruments;2004-09

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