Requirements of Neutral Beam Source Regarding Gas Pressure and Neutral Angle for Nanoscale Etching-Reference-Cited by-同舟云学术

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Requirements of Neutral Beam Source Regarding Gas Pressure and Neutral Angle for Nanoscale Etching

Published:2004-10-08 Issue:10 Volume:43 Page:7261-7266
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Sung Jin,Lee Hae June,Yeom Geun Young,Lee Jae Koo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=10R/a=7261/pdf

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the energy band of neutral-beam etched Si/Si0.7Ge0.3 nanopillars;Japanese Journal of Applied Physics;2021-02-10

2. Time-dependent measurement of charge density on the bottom of high aspect capillary hole in pulse-modulated VHF capacitively coupled Ar plasma;Japanese Journal of Applied Physics;2020-12-18

3. Evaluation of absolute charge density at the bottom of high aspect capillary holes exposed to a pulsed very high frequency plasma;Japanese Journal of Applied Physics;2020-04-27

4. Extraction and neutralization of positive and negative ions from a pulsed electronegative inductively coupled plasma;Plasma Sources Science and Technology;2015-10-22

5. Oxygen Atom Neutral Beam Assisted Deposited Al2O3 and its Application to the Fabrication of Zinc Oxide Thin Film Transistor;Molecular Crystals and Liquid Crystals;2011-10-18

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