Molecular Beam Epitaxial Growth of Hexagonal CdSe and ZnCdSe on Cubic GaAs(111)B Substrates-Reference-Cited by-同舟云学术

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Molecular Beam Epitaxial Growth of Hexagonal CdSe and ZnCdSe on Cubic GaAs(111)B Substrates

Published:2000-10-15 Issue:Part 2, No. 10B Volume:39 Page:L1026-L1028
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsumura Nobuo,Ueda Jun,Saraie Junji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Treatment and aging studies of GaAs(111)B substrates for van der Waals chalcogenide film growth;Journal of Vacuum Science & Technology B;2024-03-27

2. Wurtzite vs. rock-salt MnSe epitaxy: electronic and altermagnetic properties;Nanoscale;2024

3. Wurtzite ZnSe nanowires: growth, photoluminescence, and single-wire Raman properties;Nanotechnology;2006-10-25

4. Electronic structure and optical absorption spectra of CdSe covered with ZnSe and ZnS epilayers;Solid State Communications;2006-02

5. Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates;Journal of Electronic Materials;2005-05

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