High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy

Published:2000-03-15 Issue:Part 2, No. 3A/B Volume:39 Page:L197-L199
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugihara Daisuke,Kikuchi Akihiko,Kusakabe Kazuhide,Nakamura Shinichi,Toyoura Yousuke,Yamada Takayuki,Kishino Katsumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Eu-Doped GaN Films Grown by Phase Shift Epitaxy;Applied Physics Express;2010-12-03

2. Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy;physica status solidi (c);2010-02

3. Low-frequency noise characterizations of GaN-based visible-blind UV detectors fabricated using a double buffer layer structure;SPIE Proceedings;2007-06-07

4. Characteristics of MBE-Grown GaN Detectors on Double Buffer Layers Under High-Power Ultraviolet Optical Irradiation;IEEE Transactions on Electron Devices;2007-04

5. Reproducible reflection high energy electron diffraction signatures for improvement of AlN using in situ growth regime characterization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

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