Simulation of Boron Diffusion in High-Dose BF2Implanted Silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A comprehensive model for the diffusion of boron in silicon in presence of fluorine;Solid-State Electronics;2013-09
2. Diffusion of Boron near Projected Ranges of B and BF2Ions Implanted in Silicon;Japanese Journal of Applied Physics;2008-12-19
3. Impact of fluorine co-implantation on B deactivation and leakage currents in low and high energy Ge preamorphised p+n shallow junctions;Materials Science and Engineering: B;2008-12
4. Diffusion modelling of low-energy ion-implanted BF2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion;Materials Science and Engineering: B;2008-12
5. Diffusion models of BF2+ and B+ implanted at low-energy in crystalline silicon;Materials Science and Engineering: B;2004-12
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