Surface Roughness of Hydrogen Ion Cut Low Temperature Bonded Thin Film Layers-Reference-Cited by-同舟云学术

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Surface Roughness of Hydrogen Ion Cut Low Temperature Bonded Thin Film Layers

Published:2000-01-15 Issue:Part 1, No. 1 Volume:39 Page:275-276
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Li Y. Albert,Bower Robert W.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of interfacial structure for low-temperature direct bonding of Si substrates sputtered with Ag nanotwinned films;Materials Characterization;2021-05

2. Hydrogen-Related Phenomena in SOI Fabricated by Using H⁺-Ion Implantation;Solid State Phenomena;2001-11

3. Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures;SPIE Proceedings;2001-08-10

4. Interface states and deep-level centers in silicon-on-insulator structures;Semiconductors;2001-08

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