Flat and Large Poly-Si Grains by a Continuous Process of Plasma-Enhanced Chemical Vapor Deposition of a-Si and Its Direct Laser Crystallization-Reference-Cited by-同舟云学术

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Flat and Large Poly-Si Grains by a Continuous Process of Plasma-Enhanced Chemical Vapor Deposition of a-Si and Its Direct Laser Crystallization

Published:2000-08-01 Issue:Part 2, No. 8A Volume:39 Page:L779-L781
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mimura Akio,Shinagawa Youmei,Kawachi Genshirou,Onisawa Kenichi,Minemura Tetsurou,Hara Masayuki,Ishida Takeshige,Takeda Tomohiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallization of long polycrystalline silicon with a long duration pulse from a Nd:YAG laser system;Japanese Journal of Applied Physics;2015-06-12

2. Pulsed Laser System with Variable Pulse Duration for Laser Annealing;The Review of Laser Engineering;2013

3. Monitoring explosive crystallization phenomenon of amorphous silicon thin films during short pulse duration XeF excimer laser annealing using real-time optical diagnostic measurements;Thin Solid Films;2006-12

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