Effect of In(4×1) Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111) Substrate-Reference-Cited by-同舟云学术

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Effect of In(4×1) Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111) Substrate

Published:2000-07-15 Issue:Part 1, No. 7A Volume:39 Page:3935-3942
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Rao B. V.,Gruznev Dimitri,Tambo Toyokazu,Tatsuyama Chiei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Gaussian distribution of inhomogeneous barrier height for n-InSb/p-GaAs heterojunction prepared by flash evaporation;Journal of Alloys and Compounds;2009-07

2. Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstruction;Journal of Crystal Growth;2007-04

3. How Si( 001 )–4×3-In reconstruction improves the epitaxial quality of InSb films grown on Si( 001 ) substrates;Surface Science;2001-11

4. Twinned InSb molecular layer on Si( 111 ) substrate;Surface Science;2001-11

5. Sb adsorption on Si(1 1 1)–In(4 × 1) surface phase;Applied Surface Science;2001-05

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