Sub-1.3 nm Amorphous Tantalum Pentoxide Gate Dielectrics for Damascene Metal Gate Transistors-Reference-Cited by-同舟云学术

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Sub-1.3 nm Amorphous Tantalum Pentoxide Gate Dielectrics for Damascene Metal Gate Transistors

Published:2000-04-30 Issue:Part 1, No. 4B Volume:39 Page:2087-2093
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Inumiya Seiji,Yagishita Atsushi,Saito Tomohiro,Hotta Masaki,Ozawa Yoshio,Suguro Kyoichi,Tsunashima Yoshitaka,Arikado Tsunetoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Studies on electrical characteristics of HKMG MOS capacitor by high pressure annealing;Japanese Journal of Applied Physics;2021-11-17

2. Atomic layer deposition of tantalum oxide thin films using the precursor tert -butylimido-tris-ethylmethylamido-tantalum and water: Process characteristics and film properties;Thin Solid Films;2017-04

3. Effects of Post-Metal Annealing on Electrical Characteristics and Thermal Stability of W[sub 2]N/Ta[sub 2]O[sub 5]/Si MOS Capacitors;Journal of The Electrochemical Society;2004

4. Atomic Layer Deposition of Ta2O5 Using the TaI5 and O2 Precursor Combination;Chemical Vapor Deposition;2003-10-16

5. Optimum structure of deposited ultrathin silicon oxynitride film to minimize leakage current;Journal of Applied Physics;2003-08

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