Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial growth of Bi2Se3layers on InP substrates by hot wall epitaxy;Semiconductor Science and Technology;2012-01-31
2. Alteration of first-order phase transition by stress cycles in a MnAs layer on step-bunchedGaAs(331)B;Physical Review B;2009-06-18
3. Epitaxial orientation of MnAs layers grown on GaAs surfaces by means of solid-state crystallization;Physical Review B;2008-08-25
4. Influence of chemical etching on step bunching formation on GaAs (100) during thermal oxide removal;Thin Solid Films;2007-02
5. Surface dynamics during molecular-beam epitaxy of (In,Ga)As onGaAs(331)B: Formation of quantum wires with low In content;Physical Review B;2005-04-18
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