Characterization of Si(100) Surface after High Density HBr/Cl2/O2Plasma Etching-Reference-Cited by-同舟云学术

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Characterization of Si(100) Surface after High Density HBr/Cl2/O2Plasma Etching

Published:2000-01-15 Issue:Part 1, No. 1 Volume:39 Page:14-19
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Low Chun Hui,Chin Wee Shong,Tan Kuang Lee,Loh Foo Chan,Zhou Meisheng,Zhong Qing Hua,Chan Lap Hung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas;Journal of Applied Physics;2014-05-28

2. Effect of rare gas addition on deep trench silicon etch;Microelectronic Engineering;2004-09

3. Thermoelectric Properties of Ce Based Filled Skutterudite Phosphides;IEEJ Transactions on Fundamentals and Materials;2004

4. Response surface methodology applied to silicon trench etching in Cl2/HBr/O2 using transformer coupled plasma technique;Solid-State Electronics;2002-06

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