Improvement in Radiation Stability of SiN X-Ray Mask Membranes-Reference-Cited by-同舟云学术

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Improvement in Radiation Stability of SiN X-Ray Mask Membranes

Published:1993-12-30 Issue:Part 1, No. 12B Volume:32 Page:5941-5946
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Arakawa Tomiyuki,Okuyama Hiroshi,Yamashita Yoshio,Ohta Tuneaki,Kumar Rakesh,Noda Shuichi,Hoga Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron Beam Damage in the SiN Membrane of an X-Ray Lithography Mask;Japanese Journal of Applied Physics;1998-01-01

2. Fabrication and Evaluation of Diamond/SiC Double Layer Membrane for X‐Ray Mask;Journal of The Electrochemical Society;1997-09-01

3. Diamond/SiC Double Layer Membrane for X‐Ray Mask;Journal of The Electrochemical Society;1997-08-01

4. Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes UsingH+Ion Implantation Technique;Japanese Journal of Applied Physics;1995-12-30

5. SiC/SiN Multilayer Membrane for X-Ray Mask Deposited by Low Pressure Chemical Vapor Deposition;Japanese Journal of Applied Physics;1995-12-30

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