Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure-Reference-Cited by-同舟云学术

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Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

Published:1993-01-30 Issue:Part 1, No. 1B Volume:32 Page:308-311
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishiwara Hiroshi,Wakabayashi Hitoshi,Miyazaki Keizo,Fukao Kazuichi,Sawaoka Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator;MRS Proceedings;2010

2. Ferromagnetic semiconducting behavior ofMn1−xCrxTecompounds;Physical Review B;2005-11-21

3. Lateral Solid Phase Crystallization of Amorphous Silicon Under High Pressure;MRS Proceedings;1999

4. Formation of strain-free heteroepitaxial structures by annealing under ultrahigh pressure;Advances in the Understanding of Crystal Growth Mechanisms;1999

5. X-Ray and Photoluminescence Characterization of a Strain-Free GaAs-on-Si Structure Formed by Annealing under Ultrahigh Pressure;Japanese Journal of Applied Physics;1997-03-15

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