Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam-Reference-Cited by-同舟云学术

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Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam

Published:1993-01-15 Issue:Part 1, No. 1A Volume:32 Page:7-11
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wei Long,Tabuki Yasushi,Tanigawa Shoichiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in applications of positron annihilation spectroscopy to investigating semiconductor microstructures;Acta Physica Sinica;2017

2. Low damage reactive ion etching for photovoltaic applications;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-05

3. Cross-Contamination from Etching Materials in Reactive Ion Etcher;Japanese Journal of Applied Physics;1997-05-15

4. Scanning Probe Microscopy;Analytical Chemistry;1996-01-01

5. Plasma Induced Defects in GaAs Probed by a Monoenergetic Positron Beam;Le Journal de Physique IV;1995-01

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