Approach to Patterning of Extreme Ultraviolet Lithography Masks using Ru Buffer Layer-Reference-Cited by-同舟云学术

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Approach to Patterning of Extreme Ultraviolet Lithography Masks using Ru Buffer Layer

Published:2001-12-15 Issue:Part 1, No. 12 Volume:40 Page:6998-7001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Byoung Taek,Hoshino Eiichi,Takahashi Masashi,Yoneda Takashi,Yamanashi Hiromasa,Hoko Hiromasa,Ryoo ManHyoung,Chiba Akira,Ito Masaaki,Sugawara Minoru,Ogawa Tarou,Okazaki Sinji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluating the Optical Index of Ta and Ta-Based Absorbers for an Extreme Ultraviolet Mask Using Extreme Ultraviolet Reflectometry;Japanese Journal of Applied Physics;2008-06-20

2. EUV LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING AND NANOFABRICATION;COSMOS;2007-11

3. Direct Evaluation of Surface Roughness of Substrate and Interfacial Roughness in Molybdenum/Silicon Multilayers Using Extreme Ultraviolet Reflectometer;Japanese Journal of Applied Physics;2007-09-20

4. Investigation of several materials as buffer layer candidates of EUVL mask;SPIE Proceedings;2004-08-20

5. Enhancement of EUV Reflective Multilayer Properties by the Insertion of a Ru Barrier Layer;Journal of the Korean Physical Society;2003-11-15

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