Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector-Reference-Cited by-同舟云学术

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Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector

Published:2001-12-01 Issue:Part 2, No. 12A Volume:40 Page:L1290-L1292
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lin Shih-Yen,Tsai Yao-Jen,Lee Si-Chen

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct growth and size tuning of InAs/GaAs quantum dots on transferable silicon nanomembranes for solar cells application;Journal of Materials Science: Materials in Electronics;2021-06-15

2. Influence of Three-Component Barrier Layers on Optical Properties of Photodetectors with Quantum Dots;Solid State Phenomena;2021-04

3. MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality in the 1.3 μm band;Journal of Materials Science: Materials in Electronics;2020-02-12

4. Investigation of optical properties of QD-InAs/GaAs heterostructures obtained by ion-beam deposition;IOP Conference Series: Materials Science and Engineering;2019-11-01

5. Modeling of pyramidal shape quantum dot infrared photodetector: the effects of temperature and quantum dot size;Journal of Nanophotonics;2018-04-18

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