Increased Thermal Stability of W/Ta2O5Gate Structure Using Effective Diffusion Barrier of Denuded Tungsten Nitride-Reference-Cited by-同舟云学术

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Increased Thermal Stability of W/Ta2O5Gate Structure Using Effective Diffusion Barrier of Denuded Tungsten Nitride

Published:2001-08-15 Issue:Part 1, No. 8 Volume:40 Page:4854-4861
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Cho Ihl Hyun,Park Ji-Soo,Sohn Dong Kyun,Ha Jae Hee

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS₂ Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters;ACS Applied Nano Materials;2024-05-30

2. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology;Progress in Materials Science;2011-07

3. Influence of thickness on the material characteristics of reactively sputtered W2N layer and electrical properties of W/W2N/SiO2/Si capacitors;Journal of Alloys and Compounds;2008-09

4. Influence of Nitrogen Content in WN[sub x] on Its Thermal Stability and Electrical Property as a Gate Electrode;Journal of The Electrochemical Society;2006

5. Effects of Post-Metal Annealing on Electrical Characteristics and Thermal Stability of W[sub 2]N/Ta[sub 2]O[sub 5]/Si MOS Capacitors;Journal of The Electrochemical Society;2004

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