A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric
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Published:2001-04-30
Issue:Part 1, No. 4B
Volume:40
Page:2943-2947
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Huang Chih-Jen,Liu Yun-Chang,Wang Mu-Chun,Caywood John,Hong Shi-Fang,Wu Auter,Hsia Liang-Chu,Chang Yi-Jao,Liu Fu-Tai
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering