Scanning Tunneling Microscopy Study of thec(4×4) Structure Formation in the Sub-Monolayer Sb/Si(100) System-Reference-Cited by-同舟云学术

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Scanning Tunneling Microscopy Study of thec(4×4) Structure Formation in the Sub-Monolayer Sb/Si(100) System

Published:2001-10-15 Issue:Part 1, No. 10 Volume:40 Page:6069-6072
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Saranin Alexander A.,Zotov Andrey V.,Kotlyar Vasiliy G.,Lifshits Victor G.,Kubo Osamu,Harada Toru,Kobayashi Tadashi,Yamaoka Nobumitsu,Katayama Mitsuhiro,Oura Kenjiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two distinct Sb-adsorption steps onSi(5512)−2×1: Indiffusion followed by preferential adsorption;Physical Review B;2007-06-25

2. Modification of Sb/Si(001) interface by incorporation of In(4 x 3) surface reconstruction;APPL SURF SCI;2004

3. Stability of Sb line structures on Si(001);Physical Review B;2003-05-21

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