A Study of Photoelectrochemical Oxidation of GaN Epilayers by Extrinsic Photoconductivity-Reference-Cited by-同舟云学术

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A Study of Photoelectrochemical Oxidation of GaN Epilayers by Extrinsic Photoconductivity

Published:2001-01-15 Issue:Part 2, No. 1A/B Volume:40 Page:L10-L12
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fu Dejun,Yuldashev Shavakat U.,Kim Nam Hwa,Ryu Young Sun,Yun Jae Sung,Park Seung Ho,Kang Tae Won,Chung Kwan Soo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase structure and microwave dielectric properties of Zr(Zn1/3Nb2/3)xTi2−xO6 (0.2 ≤ x ≤ 0.8) ceramics;Journal of Materials Science: Materials in Electronics;2012-11-01

2. Phase structure and microwave dielectric properties of Mn-doped (1−x)ZrTi2O6–xZnNb2O6(x = 0.13–0.53) ceramics;Journal of Materials Science: Materials in Electronics;2012-06-03

3. Electrical Properties of Gallium Oxide Grown by Photoelectrochemical Oxidation of GaN Epilayers;Japanese Journal of Applied Physics;2002-12-15

4. GaN metal–oxide–semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation;Applied Physics Letters;2002-01-21

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