Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=10/a=102102/pdf
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1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2. Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips
3. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
4. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
5. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency
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1. Optical Characterization of InGaN Quantum Structures at the Nanoscale;Advanced Quantum Technologies;2024-03-18
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5. Quantum non-Markovian dynamics controlled by a local nanoprobe in nanosystems coupled via optical near fields;Japanese Journal of Applied Physics;2021-12-01
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