Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon–Germanium Wire Tri-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain-Reference-Cited by-同舟云学术

Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon–Germanium Wire Tri-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain

Published:2010-12-03 Issue:12 Volume:3 Page:124201
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Ikeda Keiji,Oda Minoru,Kamimuta Yuuichi,Moriyama Yoshihiko,Tezuka Tsutomu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=12/a=124201/pdf

Reference9 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. 50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel

3. Fermi-level pinning and charge neutrality level in germanium

4. Growth and dislocation behavior in GeSi bulk alloys

5. Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique

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